WIN’s 0.12µm GaN power process qualified for 40V operation

09.06.26 09:38 Uhr

WIN Semiconductors Corp of Taoyuan City, Taiwan — which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructure and networking markets — says that its NP12-0B process has been qualified for 40V operation...Weiter zum vollständigen Artikel bei Semiconductor Today

Quelle: Semiconductor Today

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