WIN’s 0.12µm GaN power process qualified for 40V operation
WIN Semiconductors Corp of Taoyuan City, Taiwan — which provides pure-play gallium arsenide (GaAs) and gallium nitride (GaN) wafer foundry services for the wireless, infrastructure and networking markets — says that its NP12-0B process has been qualified for 40V operation...Weiter zum vollständigen Artikel bei Semiconductor Today
Quelle: Semiconductor Today
